By Topic

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Aoki, M. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Sano, H. ; Suzuki, M. ; Takahashi, M.
more authors

A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of InGaAs/InGaAsP MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6 dB extinction ratio is demonstrated.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 23 )