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Single-event sensitivity of a single SRAM cell

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7 Author(s)
Darracq, F. ; Bordeaux I Univ., Talence, France ; Beauchene, T. ; Pouget, V. ; Lapuyade, H.
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A test vehicle has been specially realized to demonstrate that different physical mechanisms are responsible for single-event upset phenomena within an elementary memory cell, depending on the impact location. Validation is performed using pulsed laser equipment.

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Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 3 )