By Topic

Energy dependence of proton damage in optical emitters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Johnston, A.H. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Miyahira, T.F.

The energy dependence of proton displacement damage effects is investigated for light-emitting diodes (LEDs) and laser diodes. Injection-enhanced annealing occurs more rapidly when devices are irradiated with protons below 50 MeV compared with annealing from 200-MeV protons. A different interpretation of damage in amphoterically doped LEDs is used to show that the dependence of damage on energy is relatively flat for energies above 50 MeV, in contrast to older results in the literature that show a continued decrease in damage at higher energies.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 3 )