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Temperature dependence of heavy ion-induced current transients in Si epilayer devices

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5 Author(s)
J. S. Laird ; Japan Atomic Energy Res. Inst., Takasakishi, Japan ; T. Hirao ; S. Onoda ; H. Mori
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We report on the temperature dependence of the heavy-ion transient-ion beam induced current response of Si epilayer devices from 80 to 300 K. The measurements were performed on a heavy-ion microbeam in conjunction with the new transient-ion beam induced current system developed at the Japan Atomic Energy Research Institute. Furthermore, we perform a detailed comparison with technology computer-aided design (TCAD) simulations and discuss the results in terms of TCAD modeling, experimental procedure, and the implications for temperature-related single-event upset modeling

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IEEE Transactions on Nuclear Science  (Volume:49 ,  Issue: 3 )