Cart (Loading....) | Create Account
Close category search window
 

Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Bebek, C. ; E.O. Lawrence Berkeley Nat. Lab., CA, USA ; Groom, D. ; Holland, S. ; Karcher, A.
more authors

P-channel backside illuminated silicon charge-coupled devices (CCDs) were developed and fabricated on high-resistivity n-type silicon. The devices have been exposed up to 1 × 1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for space missions of long duration.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 3 )

Date of Publication:

Jun 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.