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Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

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12 Author(s)
Bebek, C. ; E.O. Lawrence Berkeley Nat. Lab., CA, USA ; Groom, D. ; Holland, S. ; Karcher, A.
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P-channel backside illuminated silicon charge-coupled devices (CCDs) were developed and fabricated on high-resistivity n-type silicon. The devices have been exposed up to 1 × 1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for space missions of long duration.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 3 )

Date of Publication:

Jun 2002

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