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Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

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3 Author(s)
Emsley, M.K. ; Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA ; Dosunmu, O. ; Unlu, M.S.

We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:8 ,  Issue: 4 )