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High-efficiency optical emission past 1.3 μm of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-μm vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths while maintaining high intensity. The increase in strain of these new alloys necessitates the use of tensile strain compensating GaNAs barriers around quantum-well (QW) structures. With the incorporation of Sb and using In concentrations as high as 40%, high-intensity photoluminescence (PL) was observed as long as 1.6 μm. PL at 1.5 μm was measured with peak intensity over 50% of the best 1.3 μm GaInNAs samples grown. Three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 μm.
Selected Topics in Quantum Electronics, IEEE Journal of (Volume:8 , Issue: 4 )
Date of Publication: Jul/Aug 2002