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Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry

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8 Author(s)
Pogany, D. ; Inst. for Solid State Electron., Vienna Univ. of Technol., Austria ; Dubec, V. ; Bychikhin, S. ; Furbock, C.
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A novel two-dimensional backside optical imaging method for thermal energy mapping inside semiconductor devices is presented. The method is based on holographic interferometry from the device backside and uses the thermo-optical effect. An image of the local thermal energy is obtained with 5-ns time resolution using a single stress pulse. The technique allows a unique recording of the internal device behavior. The method is demonstrated analyzing the nonrepetitive thermal and current flow dynamics in smart power electrostatic discharge (ESD) protection devices. A spreading of the current during the stress pulse is observed and explained by the effect of the negative temperature dependence of the impact ionization coefficient.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 10 )