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High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection

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6 Author(s)
Fay, P. ; Dept. of Electr. Eng., Notre Dame Univ., IN, USA ; Schulman, J.N. ; Thomas, S., III ; Chow, D.H.
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Small-area antimonide-based backward diodes for zero-bias millimeter-wave detection have been fabricated and tested. The devices were fabricated using high-resolution I-line stepper lithography, allowing accurate control of the small device active area required for operation at W-band. The devices exhibit excellent measured performance from 1-110 GHz, with responsivities when driven from a 50-/spl Omega/ source of 2540 V/W at 95 GHz. This translates to a projected responsivity of 11.5 × 103 V/W at 95 GHz for a conjugately matched detector. The compression characteristics of the detectors have been measured, with 1.2 dB of responsivity compression for an input power of 8 μW.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 10 )