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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency

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12 Author(s)
Kovsh, A.R. ; A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia ; Maleev, N.A. ; Zhukov, A.E. ; Mikhrin, S.S.
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Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 μm. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 μm, threshold current density of 147 A/cm2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device

Published in:

Electronics Letters  (Volume:38 ,  Issue: 19 )

Date of Publication:

12 Sep 2002

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