Referenced Items are not available for this document.
Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 μm. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 μm, threshold current density of 147 A/cm2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device
Published in:
Electronics Letters
(Volume:38
,
Issue:
19
)
Date of Publication: 12 Sep 2002
- Page(s):
- 1104 - 1106
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7421918
- Digital Object Identifier :
- 10.1049/el:20020793
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 10 December 2002
- Issue Date :
- 12 Sep 2002
- Sponsored by :
- Institution of Engineering and Technology
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