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25 to 300°C ultra-low-power voltage reference compatible with standard SOI CMOS process

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3 Author(s)
Adriaensen, S. ; Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium ; Dessard, V. ; Flandre, D.

A new patented voltage reference is presented. The very simple architecture, which can be implemented in standard silicon-on-insulator CMOS processes, gives very low power consumption (from 1 pA at 25°C up to 50 nA at 300°C) and good voltage stability (about 200 ppm/°C) over the whole temperature range

Published in:

Electronics Letters  (Volume:38 ,  Issue: 19 )