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RC-SCR: very-low-voltage ESD protection circuit in plain CMOS

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5 Author(s)
Feng, H. ; Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA ; Zhan, R. ; Wu, Q. ; Chen, G.
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A simple, novel RC-coupled very-low-voltage silicon controlled rectifier, electrostatic discharge protection circuit is reported, implemented in 0.35 μm CMOS, which is confirmed by transient electrostatic discharge simulation and measurement, and results in a very low triggering of 7 V, a 60% reduction over traditional silicon controlled rectifiers

Published in:

Electronics Letters  (Volume:38 ,  Issue: 19 )