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Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

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9 Author(s)
Zhangcheng Xu ; Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark ; K. Leosson ; D. Birkedal ; J. M. Hvam
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Summary form only given. We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.

Published in:

Molecular Beam Epitaxy, 2002 International Conference on

Date of Conference:

15-20 Sept. 2002