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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laser

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12 Author(s)
Paranthoen, C. ; Lab. de Phys. des Solides, Inst. Nat. des Sci. Appliques, Rennes, France ; Platz, C. ; Moreau, G. ; Bertru, N.
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In recent years, self assembled quantum dots (QDs) have attracted much attention, because of the great potentialities expected from their zero dimensional confinement properties, especially for the realization of opto-electronic devices such as lasers. Indeed, for a QD based laser, a lower temperature dependence (high T/sub 0/), a lower chirp (/spl alpha//sub H/) and a higher modulation bandwidth are predicted compared to the conventional quantum well lasers. Numerous studies have been performed for the growth of InAs/GaAs QDs, and lasers have been realized, presenting improved performances (T/sub 0/=161 K @ 350 K [1], /spl alpha//sub H/=0 @ 1 GHz [2]).

Published in:

Molecular Beam Epitaxy, 2002 International Conference on

Date of Conference:

15-20 Sept. 2002