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Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact [111]B GaAs substrates: the effect of an ultrathin GaAs buffer layer

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2 Author(s)
S. Sugahara ; Dept. of Electron. Eng., Univ. of Tokyo, Japan ; M. Tanaka

Summary form only given. MnAs is an attractive material for semiconductor spintronic devices, since MnAs is a ferromagnetic metal at room temperature and can be epitaxially grown on Si and GaAs substrates. We demonstrate the growth of MnAs/AlAs/MnAs MTJs having flat interface morphology, by the use of a several-monolayer(ML)-thick ultrathin GaAs buffer layer grown on an exact [111]B GaAs substrate. The magnetization (M-H) loop of this MTJ is also presented.

Published in:

Molecular Beam Epitaxy, 2002 International Conference on

Date of Conference:

15-20 Sept. 2002