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Summary form only given. Using a newly-built dedicated beamline at the synchrotron BESSY II in Berlin, we have studied the growth dynamics during GaAs homoepitaxy. Due to a characteristic shift of the surface unit cell from layer to layer, growth oscillations at or close to MBE-typical growth rates can be observed in situ using X-ray diffraction at grazing incidence and exit angles. We also compare RHEED and X-ray diffraction oscillations measured simultaneously.