By Topic

Terrace and reconstruction dynamics on the growing GaAs[001] surface studied by synchrotron X-ray diffraction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
W. Braun ; Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany ; B. Jenichen ; V. M. Kaganer ; A. G. Shtukenherg
more authors

Summary form only given. Using a newly-built dedicated beamline at the synchrotron BESSY II in Berlin, we have studied the growth dynamics during GaAs[001] homoepitaxy. Due to a characteristic shift of the surface unit cell from layer to layer, growth oscillations at or close to MBE-typical growth rates can be observed in situ using X-ray diffraction at grazing incidence and exit angles. We also compare RHEED and X-ray diffraction oscillations measured simultaneously.

Published in:

Molecular Beam Epitaxy, 2002 International Conference on

Date of Conference:

15-20 Sept. 2002