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1.36 /spl mu/m InGaNAs/GaNAs laser diodes grown by molecular beam epitaxy using an Ar/N/sub 2/ RF plasma

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5 Author(s)
Gupta, J.A. ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; Barrios, P.J. ; Wasilewski, Z.R. ; Aers, G.C.
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Among the advantages of dilute nitride III-V heterostructures is the opportunity for advanced strain and bandgap engineering in the active regions of laser diode structures. In the present work we use tensile-strained GaNAs barrier layers to reduce the confinement energies in compressively-strained InGaNAs single quantum wells on GaAs. We also demonstrate the effectiveness of Ar gas dilution for producing high-quality dilute nitride layers with an RF plasma cell.

Published in:

Molecular Beam Epitaxy, 2002 International Conference on

Date of Conference:

15-20 Sept. 2002

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