1.36 /spl mu/m InGaNAs/GaNAs laser diodes grown by molecular beam epitaxy using an Ar/N/sub 2/ RF plasma

Among the advantages of dilute nitride III-V heterostructures is the opportunity for advanced strain and bandgap engineering in the active regions of laser diode structures. In the present work we use tensile-strained GaNAs barrier layers to reduce the confinement energies in compressively-strained InGaNAs single quantum wells on GaAs. We also demonstrate the effectiveness of Ar gas dilution for producing high-quality dilute nitride layers with an RF plasma cell.