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1.3 /spl mu/m InGaAsN/GaAs edge emitting and vertical cavity surface emitting lasers grown by molecular beam epitaxy

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5 Author(s)
Peng, C.S. ; Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland ; Jouhti, T. ; Konttinen, J. ; Li, W.
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We has designed and fabricated edge-emitting InGaAsN/GaAs quantum well lasers operating at 1.32 /spl mu/m. The layer structure is grown by molecular beam epitaxy. Continuous-wave operation at low threshold current has been demonstrated at room temperature. We also demonstrated a photo-pumped 1.28 /spl mu/m continuous-wave vertical-cavity surface emitting laser grown in a single nucleation process by molecular beam epitaxy.

Published in:

Molecular Beam Epitaxy, 2002 International Conference on

Date of Conference:

15-20 Sept. 2002