By Topic

A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed bragg reflectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yan-Kuin Su ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Jingchang Zhong ; Shooti-Jinn Chang

Taking into account the tunneling effect of the superlattice, the authors present for the first time a vertical-cavity surface-emitting laser with AlAs[GaAs-AlAs] semiconductor/superlattice distributed Bragg reflectors (DBRs). The structure of a 19-period-AlAs (73.3 nm)-18.5-pair [GaAs (3.0 nm)-AlAs (0.7 nm)] DBR was grown on an n-GaAs [100] substrate by molecular beam epitaxy, and the device was fabricated by using a modified technique of proton implantation. It was found from the experiments that the peak reflectivity of the DBR is as high as 99.7%, the central wavelength is at about 840 nm, and the reflection bandwidth is wide up to 90 nm. A 20×20 μm2 square mesa on the top of the DBR was made by the wet chemical etching method to measure the series resistance of the devices. It can be seen that more than a third of them are within 20-30 /spl Omega/ that lead to ideal optical characteristics, low dissipated power, and reliability-some of the most important factors for the devices to be used in a number of applications in the future.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 10 )