By Topic

Ultra-low-power thermal sensor with silicon-on-insulator (SOI) structure for high-temperature applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Bin Li ; Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China ; Lai, P.T. ; Sin, J.K.O. ; Liu, B.Y.
more authors

In this work, thermal resistors based on a simple rectangular structure are fabricated on three kinds of substrates thin-film (0.1 μm) silicon-on-insulator (SOI), thick-film (10 μm) SOI and bulk Si, and their characteristics are investigated. Measurements verify that SOI can indeed have additional freedom for increasing the maximum operating temperature (Tmax). More importantly, the thin-film SOI thermal resistor not only achieves a Tmax as high as 420°C, but also a low operating current of 1 μA, which is about 1,000 times smaller than that of the thick-film SOI counterpart for the same Tmax. In conclusion, silicon resistor on SOI is a promising low-cost thermal sensor for a broad scope of low-power high-temperature applications.

Published in:

Sensors, 2002. Proceedings of IEEE  (Volume:2 )

Date of Conference: