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A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300°C)

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3 Author(s)
Portmann, L. ; Swiss Fed. Inst. of Technol., Lausanne, Switzerland ; Ballan, H. ; Declercq, M.

The design of a 5 V fully integrated magnetic sensor able to operate up to 270°C is presented. Fabricated in a Partially Depleted (PD) 1 μm SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.

Published in:
Sensors, 2002. Proceedings of IEEE  (Volume:2 )

Date of Conference: 2002

Page(s):
1401 - 1406 vol.2
Print ISBN:
0-7803-7454-1
INSPEC Accession Number:
7535191
Digital Object Identifier :
10.1109/ICSENS.2002.1037326
Product Type:
Conference Publications

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