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A Pt/Ga2O3/SiC Schottky diode based hydrocarbon gas sensor

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4 Author(s)
A. Trinchi ; Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia ; K. Galatsis ; W. Wlodarski ; Y. X. Li

This paper presents the propene gas sensing performance of Pt/Ga2O3/SiC based Schottky diodes. The metal oxide semiconducting Ga2O3 thin films were doped with Zn and prepared by the sol-gel process. The thin films were deposited onto the SiC by the spin coating technique and a Pt layer was deposited on the top of the metal oxide forming the Schottky diode. The sensor responses were stable and repeatable towards propene at operating temperatures between 300 and 600°C. The diodes were biased at a constant current of 2 mA. When exposed to 1,900 ppm of propene at an operating temperature of 525°C, a shift of 85 mV was observed.

Published in:

Sensors, 2002. Proceedings of IEEE  (Volume:2 )

Date of Conference:

2002