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This paper presents the propene gas sensing performance of Pt/Ga2O3/SiC based Schottky diodes. The metal oxide semiconducting Ga2O3 thin films were doped with Zn and prepared by the sol-gel process. The thin films were deposited onto the SiC by the spin coating technique and a Pt layer was deposited on the top of the metal oxide forming the Schottky diode. The sensor responses were stable and repeatable towards propene at operating temperatures between 300 and 600°C. The diodes were biased at a constant current of 2 mA. When exposed to 1,900 ppm of propene at an operating temperature of 525°C, a shift of 85 mV was observed.