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Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

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5 Author(s)
Hayakawa, T. ; Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan ; Akinaga, F. ; Kuniyasu, T. ; Matsumoto, K.
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High reliability and high-power 1.05 μm highly strained InGaAs laser diodes were realized with using strain compensation for pumping TDFA. We can expect high performances similar to those of conventional 0.98 μm lasers being used for pumping EDFA since the high optical property of InGaAs quantum well can be maintained up to 1.1 μm in the present study. Higher power operation will be expected by optimizing the waveguide design and growth parameters.

Published in:

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Date of Conference:

17-22 Mar 2002