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High reliability and high-power 1.05 μm highly strained InGaAs laser diodes were realized with using strain compensation for pumping TDFA. We can expect high performances similar to those of conventional 0.98 μm lasers being used for pumping EDFA since the high optical property of InGaAs quantum well can be maintained up to 1.1 μm in the present study. Higher power operation will be expected by optimizing the waveguide design and growth parameters.
Date of Conference: 17-22 Mar 2002