Referenced Items are not available for this document.
A technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source-drain junctions in MOSFETs is presented. Its basic principle is described. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples are shown for hot-carrier stressed MOS transistors.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
7
)
Date of Publication: July 1991
- Page(s):
- 393 - 395
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4017093
- Digital Object Identifier :
- 10.1109/55.103618
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1991
- Sponsored by :
- IEEE Electron Devices Society
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