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A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions

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2 Author(s)
Chen, W. ; Yale Univ., New Haven, CT, USA ; Ma, T.-P.

A technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source-drain junctions in MOSFETs is presented. Its basic principle is described. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples are shown for hot-carrier stressed MOS transistors.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 7 )