Referenced Items are not available for this document.
Polysilicon thin-film transistors (TFTs) were fabricated with the maximum processing temperature limited to 650 degrees C. Best results were obtained when the gate oxide was grown by a two-step high-pressure oxidation process, using high-pressure steam and then dry oxygen both at 15 atm and 650 degrees C. The TFTs exhibit a mobility of 34 cm/sup 2//V*s, threshold voltage of 3.5 V, leakage current below 0.01 pA/ mu m, subthreshold slope of 0.18 V/decade, and an ON/OFF ratio of over eight orders of magnitude. These values are comparable to those obtained with conventional polysilicon TFTs using high-temperature thermal oxidation.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
7
)
Date of Publication: July 1991
- Page(s):
- 390 - 392
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4017092
- Digital Object Identifier :
- 10.1109/55.103617
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1991
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
