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A new 50-nm nMOSFET with side-gates for virtual source-drain extensions

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5 Author(s)
Young Jin Choi ; Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., South Korea ; Byung Yong Choi ; Kyung Rok Kim ; Jong Duk Lee
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We have proposed and fabricated a novel 50-nm nMOSFET with side-gates, which induce inversion layers for virtual source/drain extensions (SDE). The 50-nm nMOSFETs show excellent suppression of the short channel effect and reasonable current drivability [subthreshold swing of 86 mV/decade, drain-induced barrier lowering (DIBL) of 112 mV, and maximum transconductance (gm) of 470 μS/μm at VD=1.5 V], resulting from the ultra-shallow virtual SDE junction. Since both the main gate and the side-gate give good cut-off characteristics, a possible advantage of this structure in an application to multi-input NAND gates was investigated.

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Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 10 )