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This paper estimates the off-leakage current (Ioff) and drive current (Ion) of various SOI MOSFETs by simulations based on the hydrodynamic-transport model; the band-to-band tunneling (BBT) effect at the drain is taken into consideration. Here, the simulations are done for SOI structures with a thick channel where the distinct quantization of energy is irrelevant to the present results. It is shown that merging hydrodynamic transport with the BBT effect is indispensable if realistic Ioff estimates are to be achieved. It is shown that the symmetric double-gate SOI MOSFET does not always offer better drivability than other SOI MOSFETs, and that a single-gate SOI MOSFET with carefully selected parameters exhibits superior performance to double-gate SOI MOSFETs. It is also demonstrated that the quantum tunnel current is not significant, even in 20-nm channel SOI MOSFETs. The results suggest that we can still employ the conventional semi-classical method to estimate the off-leakage current of sub-100-nm channel low-power SOI MOSFETs.