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Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

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6 Author(s)
Washio, K. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Ohue, E. ; Oda, K. ; Hayami, R.
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Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4×1019-cm-3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4 ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for optical-fiber link and millimeter-wave communication systems of the future.

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 10 )

Date of Publication:

Oct 2002

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