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A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performance is investigated. The key features of the studied device are the use of an InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of the InGaP "insulator". For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60  μA/mm at VGD = 15 V, maximum extrinsic transconductance of 162  mS/mm with 310  mA/mm broad operation regime (> 0.9gm,max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390  are obtained at T = 300  K, respectively. In addition, good microwave performance with a flat and wide operation regime is obtained.