By Topic

Mixed particle Monte Carlo method for deep submicron semiconductor device simulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gyo-Young Jin ; Dept. of Electron. Eng., Seoul Nat. Univ., South Korea ; Chan Hyeong Park ; Hong-Shick Min

A particle simulation method is introduced in which two kinds of particle models are used in one device. A conventional Monte Carlo particle model is used in the region where nonstatic effects are evident, and a particle model based on Langevin's equation is used in the region where the drift-diffusion approximation is valid. In this way it is possible to obtain efficiency and the required physical accuracy in device simulation. For the validity of this scheme, a silicon n+ -n-n+ structure is simulated, and some important results are presented

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:10 ,  Issue: 12 )