Referenced Items are not available for this document.
A particle simulation method is introduced in which two kinds of particle models are used in one device. A conventional Monte Carlo particle model is used in the region where nonstatic effects are evident, and a particle model based on Langevin's equation is used in the region where the drift-diffusion approximation is valid. In this way it is possible to obtain efficiency and the required physical accuracy in device simulation. For the validity of this scheme, a silicon n+ -n-n+ structure is simulated, and some important results are presented
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:10
,
Issue:
12
)
Date of Publication: Dec 1991
- Page(s):
- 1534 - 1541
- ISSN :
- 0278-0070
- INSPEC Accession Number:
- 4087619
- Digital Object Identifier :
- 10.1109/43.103503
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1991
- Sponsored by :
- IEEE Council on Electronic Design Automation
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
