By Topic

Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Watling, J.R. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; Brown, A.R. ; Asenov, A. ; Svizhenko, A.
more authors

Quantum mechanical confinement effects, gate, hand-to-hand and source-to-drain tunnelling will dramatically affect the characteristics of future generation nanometre scaled devices. It has been demonstrated already that first-order quantum corrections, which satisfactorily describe quantum confinement effects, can be introduced into efficient TCAD orientated drift-diffusion simulators using the density gradient approach. In this paper we refer to Non-Equilibrium Green's Function simulations in order to calibrate the density gradient formalism in respect of both confinement and source-to-drain tunnelling using different effective masses in directions normal and parallel to the conducting channel. We demonstrate that the density gradient formalism can describe accurately the current characteristics in sub 20 nm double gate MOSFETs.

Published in:

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Date of Conference: