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3D MOSFET simulation considering long-range Coulomb potential effects for analyzing statistical dopant-induced fluctuations associated with atomistic process simulator

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5 Author(s)
Ezaki, T. ; Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan ; Ikezawa, T. ; Notsu, A. ; Tanaka, K.
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We have developed a realistic 3-D process/device simulation method for investigating the fluctuation in device characteristics induced by the statistical nature of the number and position of discrete dopant atoms. We used it to investigate the variations in characteristics of a sub-100 nm CMOS device induced by realistic dopant fluctuations considering practical device fabrication processes. In particular, sensitivity analysis of the threshold voltage fluctuation was performed in terms of the independent dopant contribution, such as that of the dopant in the source/drain region or channel region.

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Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

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