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Finite difference analysis of thermal characteristics of continuous wave operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

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11 Author(s)
Mehandru, R. ; Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA ; Dang, G. ; Luo, B. ; Kim, S.
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Summary form only given. The VCSELs of this work are based on an implanted-aperture, index-guided, lateral current injected, top dielectric mirror GaAs quantum well 850 nm design. The thermal simulation employs quasi-three dimensional finite difference analysis to calculate the temperature, thermal resistance and the rise time of temperature at a fixed bias to calculate the nonuniform heat source distribution.

Published in:

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Date of Conference:

24-24 May 2002