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Summary form only given. We report, to our knowledge, the first channel-waveguide emission from a Ti:sapphire structure. We engraved channels of 1.4-/spl mu/m depth in a 10-/spl mu/m thick Ti(0.1%):sapphire planar waveguide by reactive ion etching (RIE). RIE is a well-established method for patterning semiconductor materials.
Date of Conference: 24-24 May 2002