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High power Al0.3Ga0.7As/In0.2Ga 0.8As enhancement-mode PHEMT for low-voltage wireless communication systems

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5 Author(s)
S. H. Chen ; Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Li Chang ; E. Y. Chang ; J. W. Wu
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A 20 mm-wide enhancement-mode pseudomorphic high-electron-mobility transistor (E-PHEMT) has been developed. The device has high transconductance of 490 mS/mm, and high maximum drain current of 350 mA/mm due to the use of an Al0.3Ga0.7As/In0.2 Ga0.8As-based structure for carrier confinement. At 1.9 GHz and 3.0 V, the E-PHEMT shows 34.1 dBm (128 mW/mm) output power with power-added efficiency (PAE) of 64.5%. At 2.4 V, the maximum saturated output power is 32.25 dBm and maximum PAE is 78.5%. The E-PHEMT demonstrates excellent power performance at 1.9 GHz and below 3 V

Published in:

Electronics Letters  (Volume:38 ,  Issue: 18 )