By Topic

Fabrication of ultrahigh-density nano-pyramid arrays (NPAs) on [100] silicon wafer using scanning probe lithography and anisotropic wet etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sheu, J.-T. ; Synchrotron Radiat. Res. Center, Hsinchu, Taiwan ; Yeh, S.P. ; Wu, C.H. ; You, K.S.

Convex and concave nano-pyramid arrays (NPAs) with an areal bit density of 64.5 Gbits/in2 has been demonstrated by means of scanning probe lithography (SPL) and wet etching on the [100]-orientation silicon wafer. First, we investigated the use of a contact-mode atomic force microscope (AFM) in the generation of oxide patterns on silicon [100] surfaces. Subsequently, utilizing the oxide pattern as Si etching masks, the Si substrate was dipped in aqueous KOH solution, where un-oxidized regions were selectively etched by aqueous KOH orientation-dependent etching (ODE). Using this simple process, 20 nm convex NPAs with 100 nm pitch can be fabricated successfully. Similarly, about 2 nm concave NPAs with 100 nm were obtained after the oxidized samples were dipped in aqueous HF solution, the oxide regions were selectively etched away. To demonstrate the capability of this technology, we have showed an AFM micrograph of the letters "TLS". These patterns correspond to an ultrahigh data-storage density of about 64.5 Gbits/in2, more than 20 times increase in areal density compared to conventional optical recording. We also demonstrated that the minimum size of the pyramids and the minimum pitch could be easily controlled by the apex size of the pyramid, that is, the size of the oxidized region by AFM-based field-induced oxidation. The results indicated that this technique has potential to provide a pathway to the higher densities that will be needed in the decades ahead. Also, the influenced parameters of oxide pattern and the influence of wet etching on etching rate and shape of etched structure will be discussed.

Published in:

Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

Date of Conference: