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Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs

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2 Author(s)
lannaccone, G. ; Dipt. di Ingegneria dell''Informazione, Pisa Univ., Italy ; Amirante, E.

We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is taken into account.

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Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

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