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An enhancement-mode MOS voltage-controlled linear resistor with large dynamic range

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3 Author(s)
Moon, G. ; Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., DC, USA ; Zaghloul, M.E. ; Newcomb, R.W.

It is shown that the depletion-mode linear resistor of Babanezhad and Temes (IEEE J. Solid-State Circuits, vol. SC-19, p.932-8, 1984) can be implemented in enhancement-mode devices. This allows a large increase in the dynamic range of the resistors. By inserting a bias source, the linearity can also be improved. A layout and experimental results on the resulting IC are included

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Circuits and Systems, IEEE Transactions on  (Volume:37 ,  Issue: 10 )