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Electron transport in nanoscale bipolar transistors

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2 Author(s)
Parikh, C.D. ; Dept. of Electron. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Lundstrom, M.S.

As base widths are reduced to tens of nanometers in modern bipolar transistors, current transport becomes quasi-ballistic. Classical transport models do not capture transport at this scale. We report the development of a new one-dimensional bipolar transistor simulator - nanoBJT, to study electron transport in nanoscale transistors. The simulator incorporates a variety of carrier transport models, and solves these self-consistently with Poisson's equation. The resulting data demonstrate the limitations of the drift-diffusion and the energy transport models. Directions for future work are proposed.

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Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

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