Referenced Items are not available for this document.
A single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. This memory array utilizes a basic single-electron memory cell that has been recently fabricated. Bits of information are represented by the presence or absence of a single or a small number of electrons at conducting islands. Simulation shows that selective read and write operations can be performed in this memory array.
Published in:
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
(Volume:49
,
Issue:
9
)
Date of Publication: Sept. 2002
- Page(s):
- 1370 - 1375
- ISSN :
- 1057-7122
- INSPEC Accession Number:
- 7393203
- Digital Object Identifier :
- 10.1109/TCSI.2002.802385
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 November 2002
- Issue Date :
- Sept. 2002
- Sponsored by :
- IEEE Circuits and Systems Society
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