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A single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. This memory array utilizes a basic single-electron memory cell that has been recently fabricated. Bits of information are represented by the presence or absence of a single or a small number of electrons at conducting islands. Simulation shows that selective read and write operations can be performed in this memory array.
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on (Volume:49 , Issue: 9 )
Date of Publication: Sept. 2002