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Electrical properties of plasma-grown gate oxides on tensile-strained Si1-yCy alloy

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4 Author(s)
Mahapatra, R. ; Dept. of Phys. & Meteorol., Indian Inst. of Technol., Kharagpur, India ; Maikap, S. ; Kar, G.S. ; Ray, S.K.

Growth of gate-quality ultrathin (< 100 Å) oxides directly on tensile-strained Si1-yCy alloy layers has been investigated using microwave O2-plasma discharge. The electrical properties of oxide grown on an Si0.993C0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5 × 1011 cm-2 and 2.0 × 1011 cm-2 eV-1 , respectively. Oxide film exhibits hole trapping behaviour under Fowler-Nordheim constant current stressing

Published in:

Electronics Letters  (Volume:38 ,  Issue: 17 )