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An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 μm photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a -3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 μm laser connected externally
Published in:
Electronics Letters
(Volume:38
,
Issue:
17
)
Date of Publication: 15 Aug 2002
- Page(s):
- 987 - 989
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7381625
- Digital Object Identifier :
- 10.1049/el:20020607
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 November 2002
- Issue Date :
- 15 Aug 2002
- Sponsored by :
- Institution of Engineering and Technology
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