This paper presents the results of an investigation into the structural and electrothermal properties of a group of commercial power MOSFET devices. Variations between devices of the same type designation were examined using electrothermal measurements, microscopic analysis and mathematical simulation techniques. Transient electrical measurements demonstrate significant differences in the semiconductor die temperature, supported by observed variations in structure and thermal modelling results.
Published in:
Power Electronics, Machines and Drives, 2002. International Conference on (Conf. Publ. No. 487)
Date of Conference: 4-7 June 2002