By Topic

Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
A. Neogi ; Dept. of Phys., Duke Univ., Durham, NC, USA ; C. W. Lee ; H. O. Everitt ; T. Kuroda
more authors

Summary form only given. The spontaneous emission (SE) rate of a system may be modified by altering the photon density of states (P-DOS) and the local strength of the electromagnetic modes. The P-DOS and the SE rate can also be modified when emitters are coupled to a surface plasmon (SP) of a metallic film. A single QW (SQW) can experience strong quantum electrodynamical coupling to a SP mode if placed within the SP fringing field penetration depth. The photoluminescence (PL) decay rate from a photoexcited QW is related to the SE rate. A broad PL peak is observed from the unsilvered InGaN SQW at 2.75 eV, along with smaller peaks at 3.2 eV and 3.4 eV from the InGaN reference layer and the GaN buffer layer, respectively.

Published in:

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Date of Conference:

19-24 May 2002