By Topic

Characteristics of gradient TiO/sub 2//TiN films produced by oxidization of TiN using plasma immersion ion implantation (PIII-D) and physical vapor deposition (PVD)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
J. Y. Chen ; Dept. of Mater. Eng., Southwest Jiaotong Univ., Chengdu, China ; N. Huang ; Y. X. Leng ; P. Yang
more authors

Summary form only given. Surface modification is becoming an increasingly popular method to improve the multi-functionality, tribological and mechanical properties, semi-conductivity, as well as reliability of thin films and materials. Plasma-based deposition is an important and economical technique to modify existing materials for better requirement. We investigate and compare the characteristics of TiN films deposited using plasma immersion ion implantation-deposition (PIII-D) and physical vapor deposition (PVD). Two types of gradient TiO/sub 2//TiN/Si films were fabricated by oxidizing of TiN films at 620/spl deg/C for 20 minutes under an oxygen flow of 0.5 liter per minute. The microstructure, valence state, elemental distribution, and grain size were determined using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and transmission electron microscopy (TEM).

Published in:

Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on

Date of Conference:

26-30 May 2002