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Comparative study of different current mode sense amplifiers in submicron CMOS technology

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4 Author(s)
Chrisanthopoulos, A. ; Adv. Silicon Solutions Div., Integrated Syst. Dev. S.A, Athens, Greece ; Moisiadis, Y. ; Tsiatouhas, Y. ; Arapoyanni, A.

A comparison of different current mode sense amplifiers using 0.25 μm CMOS technology is presented. The sense amplifiers under consideration are suitable for current sensing in SRAM and flash non-volatile memories. Simulation results are given regarding the sensing delay time for different power supply voltages Vdd and bit-line capacitance values. Comparative results are also provided for the energy dissipated per sensing operation, while worst-case and high temperature simulations are included, in order to expose limitations of the sensors in various operating conditions

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Circuits, Devices and Systems, IEE Proceedings -  (Volume:149 ,  Issue: 3 )